A team of researchers at the Indian Institute of Science (IISC) has made a significant stride in power technology by developing a fully indigenous Gallium Nitride (GaN) power switch. This breakthrough marks a crucial milestone in India's efforts to advance its semiconductor industry and reduce reliance on imports.

The GaN power switch, known for its efficiency and high-frequency capabilities, has the potential to revolutionize various sectors, including power electronics, renewable energy, and telecommunications.

The IISC team's achievement showcases the prowess of Indian scientists and engineers in cutting-edge technology development. By harnessing GaN's superior properties, this innovation promises to enhance the efficiency of power conversion systems, reducing energy wastage and environmental impact.

Additionally, it could lead to the creation of more compact and lightweight electronic devices, benefitting consumers and industries alike. This development aligns with India's broader goals of achieving self-sufficiency in advanced technologies and fostering innovation.

It paves the way for the country to become a global player in the semiconductor industry. With this indigenous GaN power switch, India takes a significant step towards a sustainable and technologically advanced future.